Related papers: Breaking the doping limit in silicon by deep impur…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…
Alloying and doping are crucial for enhancing the electronic and optical properties of semiconductors while simultaneously introducing disorder. This report explores the effects of alloying and Si (0.5 at.\%) doping on…
Significant manifestation of interplay of superconductivity and charge density wave, spin density wave or magnetism is dome-like variation in superconducting critical temperature (Tc) for cuprate, iron-based and heavy Fermion…
The doping of wide gap semiconductors is an interesting problem both from the scientific and technological point of view. A well known example of this problem is the doping of Cu$_2$O. The only element which has produced an order of…
We report a systematic study on the effect of partial substitution of Sc$^{3+}$ by Ti$^{4+}$ in Sr$_{2}$ScFeAsO$_{3}$, Ca$_{2}$ScFeAsO$_{3}$ and Sr$_{3}$Sc$_{2}$Fe$_{2}$As$_{2}$O$_{5}$ on their electrical properties. High level of doping…
In the superconductor LaRu$_3$Si$_2$ with the Kagome lattice of Ru, we have successfully doped the Ru with Fe and Co atoms. Contrasting behaviors of suppression to superconductivity is discovered between the Fe and the Co dopants:…
Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using cBN was demonstrated almost three decades ago. However, to…
Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…
The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density…
We have investigated the doping dependence of the penetration depth vs. temperature in electron doped Pr$_{2-x}$Ce$_x$CuO$_{4-\delta}$ using a model which assumes the uniform coexistence of (mean-field) antiferromagnetism and…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…
We report the doping-induced antiferromagnetic state and Fermi liquid state that are connected by a superconducting region in a series of CeIrIn$_{5-x}$Hg$_x$, CeIrIn$_{5-x}$Sn$_x$ and CeIr$_{1-x}$Pt$_x$In$_5$ single crystals. Measurements…
We used \emph{in-situ} potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe$_{0.55}$Se$_{0.45}$. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system,…
The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using…
Recently topological superconductors emerge as a platform to realise Majorana Fermions which has potential application in topological quantum computation. Superconductivity in these materials can be realised by chemical doping, high…
CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the high resistivity in CdTe is due to the Fermi level…
We study the superfluid density of the $\pm$s-wave state of the minimal two band model for the Fe-based superconductors and its evolution with impurity concentration. We show that the impurity scattering of the strong coupling limit induces…
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated…
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…