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Related papers: Atomically thin p-n junctions based on two-dimensi…

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Since the discovery of graphene, two-dimensional (2D) materials have paved a new routine for designing high-performance nanoelectronic devices. To facilitate the device applications, there are three key requirements for a material: sizeable…

Materials Science · Physics 2018-04-23 Zhao Liu , Haidi Wang , Jiuyu Sun , Z. F. Wang , Jinlong Yang

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy…

Two dimensional (2D) materials, e.g. graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic…

Materials Science · Physics 2017-04-20 Yuanfang Yu , Feng Miao , Jun He , Zhenhua Ni

Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important…

Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable…

The study of graphene, since its discovery around 2004, is possibly the largest and fastest growing field of research in material science, because of its exotic mechanical, thermal, electronic, optical and chemical properties. The studies…

Materials Science · Physics 2013-06-05 Gautam Mukhopadhyay , Harihar Behera

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a two-dimensional (2D) layered material, attracting tremendous interest from…

Materials Science · Physics 2015-03-31 Xi Ling , Han Wang , Shengxi Huang , Fengnian Xia , Mildred Dresselhaus

This work proposes a new efficient approach for calculating the bending stiffness of two-dimensional materials using simple atomistic tests on small periodic unit cells. The tests are designed such that bending deformations are dominating…

Materials Science · Physics 2022-12-23 Farzad Shirazian , Roger A. Sauer

We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is…

Mesoscale and Nanoscale Physics · Physics 2009-12-18 Gang Liu , Jairo Valesco , Wenzhong Bao , Chun Ning Lau

Atomic-layer and two-dimensional (2D) materials have emerged as essential building blocks for next-generation quantum and semiconductor technologies, where atomic-scale control over light-matter interactions is critical. However, their…

Two-dimensional (2D) materials have disrupted materials science due to the development of van der Waals technology. It enables the stacking of ultrathin layers of materials characterized by vastly different electronic structures to create…

The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…

Mesoscale and Nanoscale Physics · Physics 2021-10-12 Sikandar Aftab , Ms. Samiya , Muhammad Waqas Iqbal , Fahmid Kabir , Muhammad Zahir Iqbal , M. Arslan Shehzad

Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a…

Materials Science · Physics 2023-10-16 Zhibin Zhang , Stiven Forti , Wanqing Meng , Sergio Pezzini , Zehua Hu , Camilla Coletti , Xinran Wang , Kaihui Liu

Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness.…

Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…

Materials Science · Physics 2013-06-25 Sriram Krishnamoorthy , Fatih Akyol , Pil Sung Park , Siddharth Rajan

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the…

Mesoscale and Nanoscale Physics · Physics 2015-12-08 Gui-Bin Liu , Di Xiao , Yugui Yao , Xiaodong Xu , Wang Yao

Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for…

In the last decade atomically thin 2D materials have emerged as a perfect platform for studying and tuning light-matter interaction and electronic properties in nanostructures. The optoelectronic properties in layered materials such as…

Mesoscale and Nanoscale Physics · Physics 2024-10-07 Roberto Rosati , Ioannis Paradisanos , Ermin Malic , Bernhard Urbaszek

2D materials hold transformative promise for next-generation nanoelectronics. However, successfully integrating these materials from laboratory-scale discoveries into real-world devices depends on precisely controlling their properties,…

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…

Mesoscale and Nanoscale Physics · Physics 2018-07-03 Marcos H. D. Guimaraes , Hui Gao , Yimo Han , Kibum Kang , Saien Xie , Cheol-Joo Kim , David A. Muller , Daniel C. Ralph , Jiwoong Park
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