Related papers: High-performance InSe Transistors with Ohmic Conta…

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs)…

Recently, interface has been employed to enhance superconductivity in the single-layer FeSe films grown on SrTiO3(001)(STO) with a possible Tc of ~ 80 K, which is nearly ten times of the Tc of bulk FeSe and is above the Tc record of 56 K…

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial…

Few-layer InSe draws tremendous research interests owing to the superior electronic and optical properties. It exhibits high carrier mobility up to more than 1000 cm2/Vs at room temperature. The strongly layer-tunable band gap spans a large…

An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…

We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the…

We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in non-magnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field in-duced increase in the binding energy of the shallow donor Si impurity atoms.…

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity…

Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong…

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches such as choosing metals with appropriate work functions and…

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from…

First-principles calculations are performed to investigate the effects of the adsorption of gas molecules (CO, NO, NO2, H2S, N2, H2O, O2, NH3 and H2) on the electronic properties of atomically thin indium selenium (InSe). Our study shows…

A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \{beta}-Ga2O3 for…

The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…

We experimentally investigate charge transport in In-GeTe and In-GeTe-In proximity devices, which are formed as junctions between superconducting indium leads and thick single crystal flakes of $\alpha$-GeTe topological semimetal. We…

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

Physical properties of semiconducting CdF_2 crystals doped with In are determined from measurements of the radio-frequency response of a sample with Schottky barriers at frequencies 10 - 10^6 Hz. The dc conductivity, the activation energy…

The electronic and the structural properties of two dimensional van der Waals metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene [Science…

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily…