Related papers: Integrating all-optical switching with spintronics
We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall…
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet…
Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during…
We report a systematic study of single pulse all optical helicity independent switching in CoGd bilayers, revealing that the magnetization reversal dynamics can be tuned over more than three orders of magnitude. By varying the Gd thickness…
Using time-resolved magneto-optical Kerr effect (TR-MOKE) method, helicity-dependent all-optical magnetization switching (HD-AOS) is observed in ferrimagnetic TbFeCo films. The thermal effect and opto-magneto effects are separately…
We present a laboratory system for single-shot magneto-optical (MO) imaging of ultrafast magnetization dynamics with high-sensitivity of MO rotation. We create a stack of MO images repeatedly employing a single pair of a pump and defocused…
The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven…
Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz…
Ultrafast manipulation of magnetic order has challenged our understanding the fundamental and dynamic properties of magnetic materials. So far single shot magnetic switching has been limited to ferrimagnetic alloys and multilayers. In…
Spin Hall effect, one of the cornerstones in spintronics refers to the emergence of an imbalance in the spin density transverse to a charge flow in a sample under voltage bias. This study points to a novel way for an ultrafast generation…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large…
Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
Antiferromagnets are a promising platform for next-generation spintronics due to their ultrafast spin dynamics and robustness to external fields. All-optical control of antiferromagnetic order is essential to fully exploit their potential…
2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…