Related papers: Tunable Quantum Hall Edge Conduction in Bilayer Gr…
The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four…
It is known that $n$-degenerate Landau levels with the same spin-valley quantum number can be realized by $n$-layer graphene with rhombohedral stacking under magnetic field $B$. We find that the wave functions of degenerate Landau levels…
Silicene have been proposed to host multiple topological phases depending on the environmental parameters such as gated voltage and proximity induced exchange field. Two typical topological phase are quantum spin Hall phase and quantum…
Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like…
We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction.…
An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…
We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum…
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
Charge-neutral conducting systems represent a class of materials with unusual properties governed by electron-hole (e-h) interactions. Depending on the quasiparticles' statistics, band structure, and device geometry these semimetallic…
We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the…
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…
We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion.…
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
Flat band electronic modes in twisted graphene bilayers are responsible for superconducting and other highly correlated electron-electron phases. Although some hints were known of a possible connection between the quantum Hall effect and…
We investigate the transverse electric field ($E$) dependence of the $\nu$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ($\rho_{xx}$) measured at $\nu$=0 shows an…
The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…
Recent experiments indicate that AA-stacked bilayer graphenes (BLG) could exist. Since the energy bands of the AA-stacked BLG are different from both the monolayer and AB-stacked bilayer graphenes, different integer quantum Hall effect in…