Related papers: Metal Oxidation Kinetics and the Transition from T…
Many relatively thick metal oxide films grow according to what is called the parabolic law L = 2At + . . . . Mott explained this for monovalent carriers by assuming that monovalent ions and electrons are the bulk charge carriers, and that…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…
The results of experimental investigations of the critical currents and certain nonequilibrium phenomena in thin Sn films of different width w are analyzed. Usually, thin superconducting films are divided into two groups: narrow channels…
This work reports a systematic study of the evolution of charge transport mechanism in granular ultra-thin films of palladium of thickness varying between 6nm and 2nm. While the films with thickness > 4nm exhibit metallic behaviour, that at…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
We followed the evolution of the normal and superconducting properties of Al thin films after each session of various successive oxygen irradiations at ambient temperature. Such irradiated films, similar to the granular ones, exhibit…
The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces…
The Mott-Gurney equation (Child's law) has been frequently applied to measure the mobility of carrier transport layers. One of the main assumption in the Mott-Gurney theory is ignoring the diffusive currents. It was not obvious, however,…
If metal surfaces are exposed to sufficiently oxygen-rich environments, oxides start to form. Important steps in this process are the dissociative adsorption of oxygen at the surface, the incorporation of O atoms into the surface, the…
The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic doping, or multiferroicity were discovered and investigated in…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
Using a Ginzburg-Landau model, we study the vortex behavior of a rectangular thin film superconductor subjected to an applied current fed into a portion of the sides and an applied magnetic field directed orthogonal to the film. Through a…
We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition…
Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied…
In this work, we show the short-time existence of solutions of the evolution equations that represent the solid state dewetting of thin films through evaporation-condensation as a two dimensional sharp interface variational model. The…
Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…
We derive the theory of the quantum (zero temperature) superconductor to metal transition in disordered materials when the resistance of the normal metal near criticality is small compared to the quantum of resistivity. This can occur most…
Layered transition metal dichalcogenide (TMD) semiconductors oxidize readily in a variety of conditions, and a thorough understanding of this oxide formation is required for the advancement of TMD-based microelectronics. Here, we combine…