Related papers: Theory of charge-spin conversion at oxide interfac…
The stability of a non-ohmic/ohmic fluid interface in the presence of a constant gravitational field and stressed by a vertical stationary electric field with unipolar injection is studied, focusing on the destabilizing action of the…
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor…
Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch…
Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation…
Proposing a general formulism in terms of local coordinates representing the tilting of the ligands' octahedra, we evaluate the electric polarization in a chain of transition metal ions with unpolar octahedron rotation. We find the orbital…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
We study theoretically the current-induced spin polarization effect in a two-terminal mesoscopic structure which is composed of a semiconductor two-dimensional electron gas (2DEG) bar with Rashba spin-orbit (SO) interaction and two attached…
It is shown that in organic semiconductors where organic magnetoresistance (OMAR) is observed, the exchange interaction between electrons and holes localized at different molecules leads to dynamic spin polarization in the direction of the…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
In connection to the chiral-induced spin-selectivity (CISS) effect, we theoretically analyze the electronic and spin states of edges of a finite $p$-orbital helical atomic chain with the intra-atomic spin-orbit interaction (SOI). This model…
We have investigated the variation of induced ferroelectric polarization under magnetic field with various directions and magnitudes in a staggered antiferromagnet Ba$_2$CoGe$_2$O$_7$. While the ferroelectric polarization cannot be…
First-principles density functional calculations demonstrate that a spin-polarized two-dimensional conducting state can be realized at the interface between two non-magnetic band insulators. The (001) surface of the diamagnetic insulator…
The possibility of controlling the interfacial properties of artificial oxide heterostructures is still attracting researchers in the field of materials engineering. Here, we used surface sensitive techniques and high-resolution…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
The polarization properties of the Compton effect in the field of a circularly polarized electromagnetic wave are discussed. In the case of nonlinear Compton effect the behavior of spin is analyzed. The transformation of the longitudinal…
This work investigates the influence of parton spin polarization on effective transport and thermodynamic coefficients in noncentral light- and heavy-ion collisions. To model this influence, I consider two sources of spin polarization:…
We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The…
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard…
We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…