Related papers: Spin field-effect transistor in a quantum spin-Hal…
Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical…
Quantum spin Hall insulators have attracted significant attention in recent years. Understanding the optical properties and spin Hall effect in these materials is crucial for technological advancements. In this study, we present theoretical…
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and…
Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We…
Quantum spin Hall insulator is characterized by the helical edge states, with the spin polarization of electron being locked to its direction of motion. Although the edge-state conduction has been observed, unambiguous evidence of the…
The effect of Rashba spin-orbit interaction in quantum wires with hard-wall boundaries is discussed. The exact wave function and eigenvalue equation are worked out pointing out the mixing between the spin and spatial parts. The spectral…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional…
We study the thermoelectric response of a device containing a pair of helical edge states contacted at the same temperature $T$ and chemical potential $\mu$ and connected to an external reservoir, with different chemical potential and…
Using canonical transformations we diagonalize approximately the Hamiltonian of a gaussian wire with Rashba spin-orbit interaction. This proceedure allows us to obtain the energy dispersion relations and the wavefunctions with good…
The Rashba effect as an electrically tunable spin-orbit interaction is the base for a multitude of possible applications such as spin filters, spin transistors, and quantum computing using Majorana states in nanowires. Moreover, this…
We investigate intersubband mixing effects in multichannel quantum wires in the presence of Rashba spin-orbit coupling and attached to two terminals. When the contacts are ferromagnetic and their magnetization direction is perpendicular to…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
A novel method and nanodevice are introduced that allows to rotate the single electron spin confined in a gated electrostatic InSb nanowire quantum dot. Proposed method does not require application of any (oscillating or static) external…
We developed the theory of electronic properties of semiconductor quantum rings with the Rashba spin-orbit interaction irradiated by an off-resonant high-frequency electromagnetic field (dressing field). Within the Floquet theory of…
We study ballistic transport of spin-polarized electrons through quantum wires in which the strength of the Rashba spin-orbit interaction (SOI) is spatially modulated. Subband mixing, due to SOI, between the two lowest subbands is taken…
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to…
We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
The spin-orbit interaction in heavy hole gas formed at $p$-doped semiconductor heterojunctions and electron gas at {\mbox SrTiO}${}_3$ surfaces is cubic in momentum. Here we report magnetotransport properties of k-cubic Rashba spin-orbit…