Related papers: Recent advances in spin-orbit torques: Moving towa…
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization…
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant…
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Interplay between magnetization dynamics and electric current in a conducting ferromagnet is theoretically studied based on a microscopic model calculation. First, the effects of the current on magnetization dynamics (spin torques) are…
Spintronics is the science and technology of electric control over spin currents in solid-state-based devices. Recent advances have demonstrated a coupling between electronic spin currents in non-magnetic metals and magnons in magnetic…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery…
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating…
Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…
For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…
This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
Laser-induced femtosecond demagnetization, femtomagnetism, offers a potential route to develop faster magnetic storage devices. It is generally believed that the traditional spin-wave theory, which is developed for thermally driven slow…
Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…