Related papers: Recent advances in spin-orbit torques: Moving towa…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Molecular spintronics is recognized to as an attractive new research direction in a field of spintronics, following to metallic spintronics and inorganic semiconductor spintronics, and attracts many people in recent decades. The purpose of…
Understanding the mechanism driving magnetization switching in spin-orbit-torque-assisted devices remains a subject of debate. While originally attributed to the spin Hall effect and spin Rashba-Edelstein effect, recent discoveries related…
The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro- and…
The origin of spin-orbit torques generated from the conversion of charge-to-spin currents is of considerable debate. Solid understanding of the physics behind is key to the development of current and voltage controlled switching dynamics in…
We theoretically investigate the supercurrent-induced magnetization dynamics of a two-dimensional lattice of ferromagnetically ordered spins placed on a conventional superconductor with broken spatial inversion symmetry and strong…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
The progress in materials science has always been associated with the development of functional materials systems, which enables us to design proof-of-concept devices. To advance further, theoretical predictions of new novel materials and…
Magnetically ordered, electrically insulating materials pave the way towards novel spintronic devices. In these materials the flow of magnetic excitations such as magnons results in pure spin currents. These spin currents can be driven by…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In metallic ferromagnets, the spin-transfer torque and spin-motive force are known to exhibit a reciprocal relationship. Recent experiments on ferromagnets with strong spin-orbit coupling have revealed a rich complexity in the interaction…
Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory and logic applications. Recently, orbital currents -- transverse orbital angular momentum flow in…
Dynamic simulations of spin-transfer and spin-orbit torques are increasingly important for a wide range of spintronic devices including magnetic random access memory, spin-torque nano-oscillators and electrical switching of…
In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…