Related papers: Gate-Controlled Magnetoresistance of a Paramagneti…
Ultrafast pump-probe imaging reveals that the efficiency of optical excitation of coherent spins waves in epitaxial iron garnet films can be effectively controlled by an external electric field at room temperature. Although a femtosecond…
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile…
Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast developing research field. This is mainly due to the perspective of energy…
Yttrium iron garnet is a complex ferrimagnetic insulator with 20 magnon modes which is used extensively in fundamental experimental studies of magnetisation dynamics. As a transition metal oxide with moderate gap (2.8 eV), yttrium iron…
Electrical control of magnetism is a long-standing goal in physics and technology, recently developed electrolyte gating techniques providing a promising route to realization. Validating a recent theoretical prediction, here we demonstrate…
We demonstrate the low temperature suppression of the platinum (Pt) spin Nernst angle in bilayers consisting of the antiferromagnetic insulator hematite ($\alpha$-Fe$_2$O$_3$) and Pt upon measuring the transverse spin Nernst…
Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far,…
A magnon Nernst effect, an antiferromagnetic analogue of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for a layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric…
We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure…
In-plane magnetic fields offer a relatively unexplored opportunity to alter the band structure of stacks of 2D materials so that they exhibit desired physical properties. Here we show that an in-plane magnetic field combined with a…
We report transport measurements in HgTe-based quantum wells with well width of 8 nm, corresponding to quantum spin Hall state, subject to in-plane magnetic field. In the absence of the magnetic field the local and nonlocal resistances…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Mott insulator plateaus in optical lattices are a versatile platform to study spin physics. Using sites occupied by two bosons with an internal degree of freedom, we realize a uniaxial single-ion anisotropy term proportional to $(S^z)^2$,…
As a thin layer of palladium (Pd) is directly deposited on an yttrium iron garnet or YIG (Y3Fe5O12) magnetic insulator film, Pd develops both low- and high-field magneto-transport effects that are absent in standalone Pd or thick Pd on YIG.…
The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature…
We study the magnon transport in the nonlocal configuration composed of two Pt strips on top of yttrium iron garnet, with and without the presence of RF microwave generated by an on-chip antenna. We find that the spin-Hall induced thermal…
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…