Related papers: High responsivity, low dark current ultraviolet ph…
Integrating two-dimensional (2D) crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, our ability to produce complicated structures is limited by the challenges of chemical…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
Generation of photocurrent via photon drag effect enables very fast light detection with response time limited by momentum relaxation. At the same time, photon drag in bulk uniform samples is small by the virtue of small photon momentum. We…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the…
The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and…
We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 $\mu$m…
High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…