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Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This…

Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy…

Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…

Mesoscale and Nanoscale Physics · Physics 2020-11-10 G. C. Vásquez , M. E. Bathen , A. Galeckas , C. Bazioti , K. M. Johansen , D. Maestre , A. Cremades , Ø. Prytz , A. M. Moe , A. Yu. Kuznetsov , L. Vines

Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…

Development in lattice strain mapping using four-dimensional scanning transmission electron microscopy (4D-STEM) method now offers improved precision and feasibility. However, automatic and accurate diffraction analysis is still challenging…

Materials Science · Physics 2022-01-04 Sihan Wang , Tim Eldred , Jacob Smith , Wenpei Gao

Compression of micro-pillars is followed in situ by a quick nano-focused X-ray scanning microscopy technique combined with three-dimensional reciprocal space mapping. Compared to other attempts using 2 X-ray nanobeams, it avoids any motion…

Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…

Quantum Physics · Physics 2020-05-05 Z. Shang , A. Hashemi , Y. Berencén , H. -P. Komsa , P. Erhart , A. V. Krasheninnikov , G. V. Astakhov

Strain engineering enables the direct modification of the atomic bonding and is currently an active area of research aimed at improving the electrocatalytic activity. However, directly measuring the lattice strain of individual catalyst…

Materials Science · Physics 2020-04-28 Debangshu Mukherjee , Jocelyn T. L. Gamler , Sara E. Skrabalak , Raymond R. Unocic

Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by…

Applied Physics · Physics 2024-06-26 Aileen Luo , Tao Zhou , Martin V. Holt , Andrej Singer , Mathew J. Cherukara

Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to…

Microwave photons inside lattices of coupled resonators and superconducting qubits can exhibit surprising matter-like behavior. Realizing such open-system quantum simulators presents an experimental challenge and requires new tools and…

Quantum Physics · Physics 2016-07-06 D. L. Underwood , W. E. Shanks , Andy C. Y. Li , Lamia Ateshian , Jens Koch , A. A. Houck

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication…

The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the…

Materials Science · Physics 2022-05-18 Jonathan R. Dietz , Evelyn L. Hu

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…

The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent…

Mesoscale and Nanoscale Physics · Physics 2016-08-03 Greg Calusine , Alberto Politi , David D. Awschalom

Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices.…

Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based…

Excitation localization involving dynamic nanoscale distortions is a central aspect of photocatalysis, quantum materials and molecular optoelectronics. Experimental characterization of such distortions requires techniques sensitive to the…

X-ray scattering has been an indispensable tool in advancing our understanding of matter, from the first evidence of the crystal lattice to recent discoveries of nuclei's fastest dynamics. In addition to the lattice, ultrafast resonant…

In recent years, halide perovskite materials have been used to make high performance solar cell and light-emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron-based Bragg…

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