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Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
Integration is currently the only feasible route towards scalable photonic quantum processing devices that are sufficiently complex to be genuinely useful in computing, metrology, and simulation. Embedded on-chip detection will be critical…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Future X-ray astrophysics missions will survey large areas of the sky with unparalleled sensitivity, enabled by lightweight, high-resolution optics. These optics inherently produce curved focal surfaces with radii as small as 2 m, requiring…
We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on…
Ultrasmall nanodiamonds (USNDs) are promising platforms for fluorescent and quantum sensing applications. Here we present first-principles electronic structure calculations of color centers in USNDs, specifically the nitrogen-vacancy (NV-)…
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like…
For the last 50 years, superconducting detectors have offered exceptional sensitivity and speed for detecting faint electromagnetic signals in a wide range of applications. These detectors operate at very low temperatures and generate a…
The superconducting nanowire single-photon detector (SNSPD) is a quantum-limit superconducting optical detector based on the Cooper-pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count…
We report results of quantum efficiency (QE) measurements carried out on a 150 nm thick nitrogen-incorporated ultrananocrystalline diamond terminated with hydrogen; abbreviated as (N)UNCD:H. (N)UNCD:H demonstrated a QE of $\sim$10$^{-3}$…
The simplicity in the fabrication of photoconductors makes them a valuable choice to investigate optoelectronic properties of colloidal quantum dot (cQD) films. Lateral photoconductors generally require a large size, in the mm2, and are…
Quantum cascade detectors (QCD) are unipolar infrared devices where the transport of the photo excited carriers takes place through confined electronic states, without an applied bias. In this photovoltaic mode, the detector's noise is not…
The search for earth abundant, efficient and stable electrocatalysts that can enable the chemical reduction of CO2 to value-added chemicals and fuels at an industrially relevant scale, is a high priority for the development of a global…
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported…
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed…
Optoelectronic functionalities of photodection and light harnessing rely on the band-to-band excitation of semiconductors, thus the spectral response of the devices is dictated and limited by their bandgap. A novel approach, free from this…