Related papers: Competing Fractional Quantum Hall and Electron Sol…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
Coulomb effects on the edge states of a two dimensional electron gas in the presence of a high magnetic field are studied for different widths of the boundaries. Schr\"odinger and Poisson equations are selfconsistently solved in the integer…
In two-dimensional (2D) electron systems under strong magnetic fields, interactions can cause fractional quantum Hall (FQH) effects. Bringing two 2D conductors to proximity, a new set of correlated states can emerge due to interactions…
In this paper we investigate the occurrence of quantum phase transitions in topological systems out of equi- librium. More specifically, we consider graphene with a sizable spin-orbit coupling, irradiated by circularly- polarized light. In…
The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
Fractional Quantum Hall effect (FQHE) is a unique many-body phenomenon, which was discovered in a two-dimensional electron system placed in a strong perpendicular magnetic field. It is entirely due to the electron-electron interactions…
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field.…
Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum…
In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near…
We report on the fractional quantum Hall states of germanene and silicene where one expects a strong spin-orbit interaction. This interaction causes an enhancement of the electron-electron interaction strength in one of the Landau levels…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…
While the integer quantum Hall effect of composite fermions manifests as the prominent fractional quantum Hall effect (FQHE) of electrons, the FQHE of composite fermions produces further, more delicate states, arising from a weak residual…