Related papers: Addressable electron spin resonance using donors a…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…
The possibility of quantum computing with spins in germanium nanoscale transistors has recently attracted interest since it promises highly tuneable qubits that have encouraging coherence times. We here present the first complete theory of…
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses…
Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling…
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout…
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as…
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the…
Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…
Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although…
We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…
A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of…
Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin…
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…
The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state…
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…
Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the properties of acceptor bound holes, where spin-orbit…
Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires low photon-loss rates and qubits with tunable electric…