Related papers: A new paradigm for the quantum spin Hall effect at…
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a…
As a topological insulator, the quantum Hall (QH) effect is indexed by the Chern and spin-Chern numbers $\mathcal{C}$ and $\mathcal{C}_{\text{spin}}$. We have only $\mathcal{C}_{\text{spin}}=0$ or $\pm \frac{1}{2}$ in conventional QH…
Conventional topological classification theory dictates that time-reversal symmetry confines the quantum spin Hall (QSH) effect to a $\mathbb{Z}_2$ classification, permitting only a single pair of gapless helical edge states. Here, we…
Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. We examine hybrid…
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to…
Twist-engineering of topological phases in two-dimensional materials offers a powerful route to modulate electronic structure beyond conventional strain or chemical control. In particular, group 15 (pnictogens) monolayers such as bismuthene…
Quantum anomalous Hall (QAH) insulator is a topological phase which exhibits chiral edge states in the absence of magnetic field. The celebrated Haldane model is the first example of QAH effect, but difficult to realize. Here, we predict…
The possibility of quantum anomalous Hall effect (QAHE) in two-dimensional kagome systems with $d$-orbital electrons is studied within a multi-orbital tight-binding model. We concentrate on the case of isotropic Slater-Koster integrals…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
Quantum Hall effect (QHE) is one of the most fruitful research topics in condensed-matter physics. Ordinarily, the QHE manifests in a ground state with time-reversal symmetry broken by magnetization to carry a quantized chiral edge…
We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the…
Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111)…
Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall…
Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an…
Despite the rapid progresses in the field of quantum spin Hall (QSH) effect, most of the QSH systems studied up to now are based on crystalline materials. Here we propose that the QSH effect can be realized in quasicrystal lattices (QLs).…
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of…
The quantum Hall effect (QHE) with quantized Hall resistance of h/{\nu}e2 starts the research on topological quantum states and lays the foundation of topology in physics. Afterwards, Haldane proposed the QHE without Landau levels, showing…
Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Amongst them is the quantum spin Hall (QSH) insulator - a two-dimensional…
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena…
Quantum anomalous Hall effect (QAHE) is significant for future low-power electronics devices, where a main challenge is realizing QAHE at high temperatures. In this work, based on experimentally reported two-dimensional (2D) germanene and…