Related papers: Cs adsorption on Bi$_2$Se$_3$
Surface states refer to electronic states emerging as a solid material terminates at a surface, and can be present in many systems. Despite their spatial proximity to material surfaces, surface states have been largely overlooked in…
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS)…
Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending…
Electron scattering in the topological surface state (TSS) of the bulk-insulating topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ was studied using quasiparticle interference observed by scanning tunneling microscopy. It was…
Sr$_x$Bi$_2$Se$_3$ and the related compounds Cu$_x$Bi$_2$Se$_3$ and Nb$_x$Bi$_2$Se$_3$ have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T$_c$…
Topological surface states have been extensively observed via optics in thin films of topological insulators. However, in typical thick single crystals of these materials, bulk states are dominant and it is difficult for optics to verify…
Bi$_2$Se$_3$ and Bi$_2$Te$_3$, and these same surfaces covered with Bi films, are exposed to Br$_2$ and Cl$_2$ in ultra-high vacuum. Low energy electron diffraction (LEED) and low energy ion scattering (LEIS) are used to investigate the…
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of…
Carrier multiplication (CM), where the absorption of a single photon results in the generation of several electron-hole pairs via impact ionization, plays a pivotal role in the quest for enhancing the performance of solar cells beyond the…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…
The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other…
The selective adsorption of a corrosive gas, SO$_2$, into two microporous pillared paddle-wheel frameworks M(bdc)(ted)0.5 [M = Ni, Zn; bdc = 1,4-benzenedicarboxylate; ted = triethylenediamine] is studied by volumetric adsorption…
Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth…
We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in…
We have computationally explored workfunction values of Cs2Te5, an existing crystalline phase of the Cs-Te system and a small bandgap semiconductor, in order to search for reduced workfunction alternatives of Cs2Te that preserve the…
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust…
The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new…
In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability…