Related papers: Characterization and modeling of thermally-induced…
This study investigates the effects of Sb, Ge, and Ga doping in AlFe$_2$B$_2$ on magnetic and magneto-caloric properties. Samples of AlFe$_2$B$_2$ and AlFe$_{1.9}$M$_{0.1}$B$_2$ (M= Ge, Ga and Sb) with 20\% excess Al were synthesized by arc…
The impurity density in high-purity germanium detectors is crucial to understand and simulate such detectors. However, the information about the impurities provided by the manufacturer, based on Hall effect measurements, is typically…
Measurements with a bare p-type high purity germanium diode (HPGe) submerged in a 19 kg liquid argon (LAr) scintillation detector at MPIK Heidelberg are reported. The liquid argon--germanium system (LArGe) is operated as a 4$\pi$…
The application of a high purity germanium (HPGe) gamma spectrometer in determining the fuel element burnup in a future reactor is studied. The HPGe detector is exposed by a Co60 source with varying irradiation rate from 10 kcps to 150 kcps…
We study the effects of an attractive interaction between the boron (B) and the nitrogen (N) atoms doped in a bilayer graphene (BLG), BC$_{14}$N, on the electronic, the thermal and the optical properties for two different types of a doping…
Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba$_{1-x}$K$_{x}$)(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ offers a unique and versatile control of…
The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here…
Many of the electronic properties of high-temperature cuprate superconductors (HTSC) are strongly dependent on the number of charge carriers put into the CuO$_2$ planes (doping). Superconductivity appears over a dome-shaped region of the…
The experimental realization of high-temperature superconductivity in compressed hydrides H$_3$S and LaH$_{10}$ at high pressures over 150 GPa has aroused great interest in reducing the stabilization pressure of superconducting hydrides.…
The best thermoelectric materials are believed to be heavily doped semiconductors. The presence of a bandgap is assumed to be essential to achieve large thermoelectric power factor and figure of merit. In this work, we study HgTe as an…
High harmonic generation (HHG) is a powerful probe of electron dynamics on attosecond to femtosecond timescales and has been successfully used to detect electronic and structural changes in solid-state quantum materials, including…
Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is…
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by…
We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent…
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly electrically conducting. Annealing in tellurium…
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are required. Ge is a promising alternative n-type dopant with an…
The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…
In this work, thermoelectric properties of Al$_{1.2}$Fe$_2$B$_2$ compound were investigated over a temperature range from 300\,K to 773\,K. Al$_{1.2}$Fe$_2$B$_2$ compound was produced by vacuum arc melting of Al, Fe, and B followed by…
The GERmanium Detector Array, GERDA, will search for neutrinoless double beta decay in 76Ge at the National Gran Sasso Laboratory of the INFN. Bare high-purity germanium detectors enriched in 76Ge will be submerged in liquid argon serving…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…