Related papers: Charged domain walls in improper ferroelectric hex…
The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or…
The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either…
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls…
We study theoretically the electronic structure of topological nodal-line semimetals. We show that, in the presence of a gap-opening spatially dependent mass term that forms a domain wall, an in-gap charged localized mode emerges at the…
Ferroelectric domain structures, separated by domain walls, often display unconventional physics and hold significant potential for applications in nano-devices. Most naturally growth domain walls are charge-neutral to avoid increased…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…
Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new…
Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large…
Ferroelectric domain walls are nm-sized interfaces between sections of different allowed values of the spontaneous polarization, the so-called domains. These walls - neutral or charged - can be created, displaced, deleted, and recreated…
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…
The improper ferroelectricity in YMnO$_3$ and other related multiferroic hexagonal manganites are known to cause topologically protected ferroelectric domains that give rise to rich and diverse physical phenomena. The local structure and…
Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…
We present in-situ transmission electron microscopy observations of domain wall motion in thin freestanding potassium niobate single-crystals. We observe that not all domains of a given polarization orientation are equally switchable in…
Charged domain walls are a type of domain walls in thin ferromagnetic films which appear due to global topological constraints. The non-dimensionalized micromagnetic energy for a uniaxial thin ferromagnetic film with in-plane magnetization…
We study the effect of a domain wall on the electronic transport in ferromagnetic quantum wires. Due to the transverse confinement, conduction channels arise. In the presence of a domain wall, spin up and spin down electrons in these…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…
We analyzed the domain morphology, electrocaloric response, and negative capacitance states in a one-dimensional array of uniformly oriented, radial symmetric ferroelectric nanowires, whose spontaneous polarization is normal to their…
First-principles calculations for pristine neutral ferroelectric domain walls in BiFeO$_3$ reveal that excess electrons are selectively trapped by the domain walls, while holes are only weakly attracted. Such trapped excess electrons may be…
Experimental observations suggest that nominally uncharged, as-grown domain walls in ferroelectric thin films can be conductive, yet comprehensive theoretical models to explain this behavior are lacking. Here, Landau theory is used to…