Related papers: Exact solution for driven oscillations in plasmoni…

In the frame of an exactly solvable model we calculate electric and magnetic fields created by uniformly moving lattice of Josephson vortices driven by the transport current in the magnetic field parallel to conducting layers. The…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…

We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic…

We study the possible expansion of the electromagnetic field scattered by a strictly convex metallic nanoparticle with dispersive material parameters placed in a homogeneous medium in a low-frequency regime as a sum of modes oscillating at…

We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase…

This paper is concerned with the inverse problem of reconstructing a small object from far field measurements by using the field interaction with a plasmonic particle which can be viewed as a passive sensor. It is a follow-up of the work…

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…

We propose a practical realization of a field-effect transistor for phonons. Our device is based on a single ionic polymeric molecule and it gives modulations as large as -25% in the thermal conductance for feasible temperatures and…

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium…

Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…

Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…

Current advances in ultrafast electron microscopy make it possible to combine optical pumping of a nanostructure and electron beam probing with sub{\aa}ngstrom and femtosecond spatiotemporal resolution. We present a theory predicting that…

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field.…

We theoretically demonstrate that dc electron flow across the junction of two-dimensional electron systems leads to excitation of edge magnetoplasmons. The threshold current for such plasmon excitation does not depend on contact effects and…

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…

We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…

We present a numerical approach for the solution of electromagnetic scattering from a dielectric cylinder partially covered with graphene. It is based on a classical Fourier-Bessel expansion of the fields inside and outside the cylinder to…

Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible regime. Here, we…