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Pure amorphous solids are traditionally considered to set the lower bound of thermal conductivity due to their disordered atomic structure that impedes vibrational energy transport. However, the lower limits for thermal conductivity in…

Mesoscale and Nanoscale Physics · Physics 2016-10-05 Jaeyun Moon , Austin J. Minnich

Thermal transport properties of amorphous materials at low temperatures are governed by the interaction between phonons and localized excitations referred to as tunneling two level systems (TLS). The temperature variation of the thermal…

Mesoscale and Nanoscale Physics · Physics 2017-04-26 Adib Tavakoli , Christophe Blanc , Hossein Ftouni , Kunal Lulla , Andrew Fefferman , Eddy Collin , Olivier Bourgeois

A topological modulation of magnetic thin films can induce a magnetic anisotropy of magnetostatic origin. In this letter, we report on the magnetic properties of NiFe layers deposited on wavy shaped Si substrates. Without any modulation,…

Materials Science · Physics 2009-01-20 J. Briones , F. Montaigne , G. Lengaigne , D. Lacour , M. Hehn

The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…

Emerging Technologies · Computer Science 2023-01-11 Anouk S. Goossens , Majid Ahmadi , Divyanshu Gupta , Ishitro Bhaduri , Bart J. Kooi , Tamalika Banerjee

Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures…

Mesoscale and Nanoscale Physics · Physics 2018-11-26 Biplab Bhattacharyya , V. P. S. Awana , T. D. Senguttuvan , V. N. Ojha , Sudhir Husale

Nanoporous carbon materials containing small domains of sp2-carbon with highly disordered structures are promising for supercapacitor applications. Herein, we synthesize amorphous carbon nanofoam with 98% volumetric void fraction and low…

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these…

Applied Physics · Physics 2024-05-31 C. Pashartis , M. J. van Setten , M. Houssa , G. Pourtois

3D printing mechanically flexible composite materials with high electrical conductivity is currently hindered by the need to use high loading of conductive filler, which severely limits flexibility. Here, microstructural patterning of…

Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order.…

Mesoscale and Nanoscale Physics · Physics 2013-05-07 Motohiko Ezawa

We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…

Instrumentation and Detectors · Physics 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a…

Mesoscale and Nanoscale Physics · Physics 2019-05-07 J. Martinez , M. Di Ventra , Yu. V. Pershin

The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…

Mesoscale and Nanoscale Physics · Physics 2016-11-18 Nathan R. McDonald , Robinson E. Pino , Peter J. Rozwood , Bryant T. Wysocki

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with…

Mesoscale and Nanoscale Physics · Physics 2014-02-14 A. Geresdi , M. Csontos , A. Gubicza , A. Halbritter , G. Mihály

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 K. Pappert , S. Hümpfner , C. Gould , J. Wenisch , K. Brunner , G. Schmidt , L. W. Molenkamp

The thermal properties of amorphous materials have attracted significant attention due to their technological importance in electronic devices. Additionally, the disorder-induced breakdown of the phonon gas model makes vibrational transport…

Applied Physics · Physics 2024-06-12 Wanyue Peng , Richard Wilson

The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models…

We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${\bf q}$. For this purpose we define the…

Disordered Systems and Neural Networks · Physics 2016-01-20 Y. M. Beltukov , C. Fusco , A. Tanguy , D. A. Parshin

This paper presents a memristor-based compute-in-memory hardware accelerator for on-chip training and inference, focusing on its accuracy and efficiency against device variations, conductance errors, and input noise. Utilizing realistic…

Neural and Evolutionary Computing · Computer Science 2024-08-28 M. Reza Eslami , Dhiman Biswas , Soheib Takhtardeshir , Sarah S. Sharif , Yaser M. Banad

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

Interface-type, analog memristors have quite a reputation for real-time applications in edge sensorics, edge computing, and neuromorphic computing. The n-type conducting BiFeO3 (BFO) is such an interface-type, analog memristor which is also…

Disordered Systems and Neural Networks · Physics 2024-09-13 Sahitya V. Vegesna , Venkata Rao Rayapati , Heidemarie Schmidt
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