Related papers: Planar Hall effect in antiferromagnetic MnTe thin …
A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
We theorize the spin Hall effect of light (SHEL) on a nano-metal film and demonstrate it experimentally via weak measurements. A general propagation model to describe the relationship between the spin-orbit coupling and the thickness of the…
We study the spin-orbit coupling induced by the splitting between TE and TM optical modes in a photonic honeycomb lattice. Using a tight-binding approach, we calculate analytically the band structure. Close to the Dirac point,we derive an…
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to…
Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…
The Heusler compound Co2MnGa is a topological semimetal with intriguing electronic and magnetic properties, making it a promising candidate for spintronic applications. This study systematically investigates the effects of substrate…
Hexagonal MnTe is an altermagnetic semiconductor with $g$-wave symmetry of spin polarization in momentum space. In the nonrelativistic limit, this symmetry mandates that electric current flowing in any crystallographic direction is…
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe…
Magnus Hall effect (MHE) is a non-linear Hall effect requiring no external magnetic field, which can be observed when an in-built electric field couples to the Berry curvature of the bandstructure, producing a current in the transverse…
Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry…
Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with…
In an intriguing recent experiment, it has been found that the two-dimensional (2D) surface states of a three-dimensional (3D) strong topological insulator (TI) support a non-zero Hall voltage transverse to an applied electric field even…
The anomalous Hall effect is investigated theoretically by means of density functional calculations for the non-collinear antiferromagnetic order of the hexagonal compounds Mn$_3$Ge and Mn$_3$Sn using various planar triangular magnetic…
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the…
Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance…
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current)…