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A kinetic ion induced electron emission (IIEE) model for general applications is developed to obtain the emitted electron energy spectrum for a distribution of ion impacts on a metallic surface. We assume an ionization cascade mechanism and…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential,…
Thermoelectric materials operating at cryogenic temperatures are in high demand for efficient cooling and power generation in applications ranging from superconductors to quantum computing. The narrow band-gap semiconductor FeSb2, known for…
Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE…
The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The…
The longitudinal spin Seebeck effect (LSSE) in Pt/Y$_3$Fe$_5$O$_{12}$ (YIG) junction systems has been investigated at various magnetic fields and temperatures. We found that the LSSE voltage in a Pt/YIG-slab system is suppressed by applying…
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…
The superconducting diode effect has been recently reported in a variety of systems and different symmetry breaking mechanisms have been examined. However, the frequency range of these potentially important devices still remains obscure. We…
The two gaps in a two-band clean s-wave superconductor are evaluated self-consistently within the quasiclassical Eilenberger weak-coupling formalism with two in-band and one inter-band pairing potentials. Superfluid density, free energy and…
An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it.…
Using time-dependent density-functional theory, we investigate the electronic stopping power of self-irradiated silicon through non-adiabatic dynamics simulations. For specific velocities above 0.6 atom units, electronic stopping shows a…
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the…
The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…
Vacancies play a crucial role in solid-state physics, but their impact on materials with strong electron-electron correlations has been underexplored. A recent study on the Ir-Sb binary system, Ir$_{16}$Sb$_{18}$ revealed a novel extended…
Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements…
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin…
Hybrid superconductor/semiconductor devices play a crucial role in advancing quantum science and technology by merging the properties of superconductors and semiconductors. To operate these devices at high temperature, Niobium could…