Related papers: Intrinsic valley Hall transport in atomically thin…
We develop a theory of Coulomb interaction-mediated contribution to valley Hall effect (VHE) in two-dimensional non-centrosymmetric gapped Dirac materials. We assume that the bare valley Hall current occurs in the system due to the presence…
It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities…
The valley degree of freedom in atomically thin transition-metal dichalcogenides provides a natural binary index for information processing. Exciton-polaritons formed under strong light-matter coupling offer a promising route to overcome…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and…
We develop a theory for the nonlocal measurement of nonlinear valley Hall effect. Different from the linear case where the direct and the inverse processes are reciprocal, we unveil that the nonlinear inverse valley Hall effect needed to…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal…
We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe$_2$ moir\'e superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic…
A twisted honeycomb bilayer exhibits a moir\'e superstructure that is composed of a hexagonal arrangement of AB and BA stacked domains separated by domain boundaries. In the case of twisted bilayer graphene, the application of an electric…
The intrinsic anomalous Hall effect is one of the most exciting manifestations of the geometric properties of the electronic wave-function. Here, we predict that the electronic wave-function's geometric nature also gives rise to a purely…
Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties…
Correlated electron systems on a honeycomb lattice have emerged as a fertile playground to explore exotic electronic phenomena. Theoretical and experimental work has appeared to realize novel behavior, including quantum Hall effects and…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…