Related papers: Interferometric Imaging of Nonlocal Electromechani…
Elastic waves propagating in piezoelectric materials are accompanied by a time-varying electric potential, which is of critical importance for acousto-electronic applications. The spatial mapping of such a potential at microwave frequencies…
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…
Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography.…
Acoustic waves have emerged as versatile on-chip information carriers with applications ranging from microwave filters to transducers. Nonreciprocal devices are desirable for the control and routing of high-frequency phonons. This is…
Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…
A reorientation of the ferroelectric domains under an action of ultrasound in LiNbO3 is observed for the first time. The involvement of the ferroelectric domain boundaries is experimentally identified by the analysis of X-ray reflection and…
Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric…
Controlling acoustic phonons, the carriers of sound and heat, has been attracting great attention toward the manipulation of sonic and thermal properties in nanometric devices. In particular, the photo-acoustic effect using ultrafast…
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…
Ferroelectric materials are the core of common technologies, such as medical ultrasound, mobile-phone antennae and low-power memory devices. The technological interest in ferroelectrics stems from the existence of switchable mesoscale…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…
Electrical pulse stimulation drives many important physical phenomena in condensed matter as well as in electronic systems and devices. Often, nanoscopic and mesoscopic mechanisms are hypothesized, but methods to image electrically driven…
As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multi-domain ferroelectric crystal: as one domain…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
To achieve quantitative interpretation of Piezoresponse Force Microscopy (PFM), including resolution limits, tip bias- and strain-induced phenomena and spectroscopy, analytical representations for tip-induced electroelastic fields inside…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for…