Related papers: Exploiting Row-Level Temporal Locality in DRAM to …

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

Memory caches are being aggressively used in today's data-parallel frameworks such as Spark, Tez and Storm. By caching input and intermediate data in memory, compute tasks can witness speedup by orders of magnitude. To maximize the chance…

Graphics Processing Units (GPUs) employ large register files to accommodate all active threads and accelerate context switching. Unfortunately, register files are a scalability bottleneck for future GPUs due to long access latency, high…

We propose Sectored DRAM, a new, low-overhead DRAM substrate that reduces wasted energy by enabling fine-grained DRAM data transfers and DRAM row activation. Sectored DRAM leverages two key ideas to enable fine-grained data transfers and…

In recent years, the size and leakage energy consumption of large last level caches (LLCs) has increased. To address this, embedded DRAM (eDRAM) caches have been considered which have lower leakage energy consumption; however eDRAM caches…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…

The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

Real-time and cyber-physical systems need to interact with and respond to their physical environment in a predictable time. While multicore platforms provide incredible computational power and throughput, they also introduce new sources of…

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…

The last level cache is vulnerable to timing based side channel attacks because it is shared by the attacker and the victim processes even if they are located on different cores. These timing attacks evict the victim cache lines using small…

Last-Level Cache (LLC) represents the bulk of a modern CPU processor's transistor budget and is essential for application performance as LLC enables fast access to data in contrast to much slower main memory. However, applications with…

Putting the DRAM on the same package with a processor enables several times higher memory bandwidth than conventional off-package DRAM. Yet, the latency of in-package DRAM is not appreciably lower than that of off-package DRAM. A promising…

Main memory database systems aim to provide users with low latency and high throughput access to data. Most data resides in secondary storage, which is limited by the access speed of the technology. For hot content, data resides in DRAM,…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…

Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…