Related papers: Characterizing, Exploiting, and Mitigating Vulnera…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics.…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's…
In this work, we examine the potential of Physical Unclonable Functions (PUFs) that have been implemented on NAND Flash memories using programming disturbances to act as sustainable primitives for the purposes of lightweight cryptography.…
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect…
Side-channel attacks on memory (SCAM) exploit unintended data leaks from memory subsystems to infer sensitive information, posing significant threats to system security. These attacks exploit vulnerabilities in memory access patterns, cache…
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…
Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state…
Storing digital information, ensuring the accuracy, steady and uninterrupted access to the data are considered as fundamental challenges in enterprise-class organizations and companies. In recent years, new types of storage systems such as…
High-capacity NAND flash memories use multi-level cells (MLCs) to store multiple bits per cell and achieve high storage densities. Higher densities cause increased raw bit error rates (BERs), which demand powerful error correcting codes.…
Emerging applications, such as big data analytics and machine learning, require increasingly large amounts of main memory, often exceeding the capacity of current commodity processors built on DRAM technology. To address this, recent…
The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unknown during the readback process. This severely affects the…
We propose binary discrete parametric channel models for multi-level cell (MLC) flash memories that provide accurate ECC performance estimation by modeling the empirically observed error characteristics under program/erase (P/E) cycling…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…
The emergence of high-density byte-addressable non-volatile memory (NVM) is promising to accelerate data- and compute-intensive applications. Current NVM technologies have lower performance than DRAM and, thus, are often paired with DRAM in…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…