Related papers: Read Disturb Errors in MLC NAND Flash Memory

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

Humans excel at lifelong learning, as the brain has evolved to be robust to distribution shifts and noise in our ever-changing environment. Deep neural networks (DNNs), however, exhibit catastrophic forgetting and the learned…

State-of-the-art techniques for addressing scaling-related main memory errors identify and repair bits that are at risk of error from within the memory controller. Unfortunately, modern main memory chips internally use on-die error…

In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…

Compute-in-memory accelerators built upon non-volatile memory devices excel in energy efficiency and latency when performing deep neural network (DNN) inference, thanks to their in-situ data processing capability. However, the stochastic…

It has been an open question in deep learning if fault-tolerant computation is possible: can arbitrarily reliable computation be achieved using only unreliable neurons? In the grid cells of the mammalian cortex, analog error correction…

Neural networks (NNs) can achieved high performance in various fields such as computer vision, and natural language processing. However, deploying NNs in resource-constrained safety-critical systems has challenges due to uncertainty in the…

Modern computing devices employ High-Bandwidth Memory (HBM) to meet their memory bandwidth requirements. An HBM-enabled device consists of multiple DRAM layers stacked on top of one another next to a compute chip (e.g. CPU, GPU, and FPGA)…

This paper studies the error metric selection for long-term memory learning in sequence modelling. We examine the bias towards short-term memory in commonly used errors, including mean absolute/squared error. Our findings show that all…

Neuromorphic computing systems uses non-volatile memory (NVM) to implement high-density and low-energy synaptic storage. Elevated voltages and currents needed to operate NVMs cause aging of CMOS-based transistors in each neuron and synapse…

Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…

Recommendation system has gained a large popularity for a variety of personalized suggestion tasks, but the ever-increasing number of user data makes real-time processing of recommendation systems difficult. NAND flash memory-based…

Error correction is essential for modern computing systems, enabling information to be processed accurately even in the presence of noise. Here, we demonstrate a new approach which exploits an error correcting phase that emerges in a system…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…

In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced…

Mid-circuit measurements used in quantum error correction are essential in quantum computer architecture, as they read out syndrome data and drive logic gates. Here, we use a heavy-hex code prepared on a superconducting qubit array to…

Resistive Random-Access Memory (ReRAM) crossbar arrays are promising candidates for in-situ matrix-vector multiplication (MVM), a frequent operation in Deep Learning algorithms. Despite their advantages, these emerging non-volatile memories…

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…

Hardware failures are a growing challenge for machine learning accelerators, many of which are based on systolic arrays. When a permanent hardware failure occurs in a systolic array, existing solutions include localizing and isolating the…