Related papers: Comment on "Influence of image forces on the elect…
We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…
We present a formula for tunneling conductance in ballistic ferromagnet/ferromagnetic insulator/superconductor junctions where the superconducting state has opposite spin pairing symmetry. The formula can involve correctly a ferromagnetism…
Magnetism and transport are two key functional ingredients in modern electronic devices. In oxide heterostructures, ferroelectricity can provide a new route to control these two properties via electrical operations, which is scientifically…
In this work, using the time-dependent density functional theory, we address the electron tunneling triggered by short (single-cycle and several-cycle) optical pulses in narrow metallic gaps under conditions relevant for actual experiments.…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
Double tunneling junctions of ferromagnet-superconductor-ferromagnet electrodes (FSF) show a jump in the conductance when a parallel magnetic field reverses the magnetization of one of the ferromagnetic electrodes. This change is generally…
We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
Helical edge states exist in the mixed spin-singlet and spin-triplet phase of a noncentrosymmetric (NCS) superconductor. In this article we have considered a planar ferromagnetic metal/NCS superconductor tunnel junction and have studied the…
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the…
When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model…
The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with…
In tunneling spectroscopy studies of ferromagnet/superconductor (F/S) junctions, the effects of spin polarization, Fermi wavevector mismatch (FWM) between the F and S regions, and interfacial resistance play a crucial role. We study the low…
Ferromagnetic half-metal Co$_2$CrAl films and tunnel contacts Co$_2$CrAl - insulator (I) - Pb are fabricated and investigated. It is found that the normalized differential conductivity $\sigma ^{\rm FS} $ of such tunnel junctions with low…
Ferroelectric tunnel junctions (FTJs) harness the unique combination of ferroelectricity and quantum tunneling, and thus herald new opportunities in next-generation nonvolatile memory technologies. Recent advancements in the fabrication of…
In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we…
By investigating the nonequilibrium transport across a metal/superconductor junction in both nonrelativistic and relativistic cases, we reveal that the asymmetric Andreev reflection with anisotropic superconductors is able to induce the…
In a Scanning Tunneling Microscope (STM), when a tunneling electron treated as a point charge enters the barrier region between the tip and the sample, it induces image charges on the conducting surfaces, which modifies the shape of the…
Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to…
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…