Related papers: Flexible-Latency DRAM: Understanding and Exploitin…

Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…

This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…

Predictable execution time upon accessing shared memories in multi-core real-time systems is a stringent requirement. A plethora of existing works focus on the analysis of Double Data Rate Dynamic Random Access Memories (DDR DRAMs), or…

Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

The initial location of data in DRAMs is determined and controlled by the 'address-mapping' and even modern memory controllers use a fixed and run-time-agnostic address mapping. On the other hand, the memory access pattern seen at the…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…

The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…

DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…

Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable full adoption of processing-using-DRAM, it is necessary to provide support for more complex…

This paper investigates hardware-based memory compression designs to increase the memory bandwidth. When lines are compressible, the hardware can store multiple lines in a single memory location, and retrieve all these lines in a single…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…

FPGAs are increasingly utilized in data centers due to their capacity to exploit data parallelism in computationally intensive workloads. Furthermore, the processing of modern data center workloads requires moving vast amounts of data,…

Over the last three decades, innovations in the memory subsystem were primarily targeted at overcoming the data movement bottleneck. In this paper, we focus on a specific market trend in memory technology: 3D-stacked memory and caches. We…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

Due to the scaling problem of the DRAM technology, non-volatile memory devices, which are based on different principle of operation than DRAM, are now being intensively developed to expand the main memory of computers. Disaggregated memory…

Flexibility at hardware level is the main driving force behind adaptive systems whose aim is to realise microarhitecture deconfiguration 'online'. This feature allows the software/hardware stack to tolerate drastic changes of the workload…