Related papers: Detection of the interfacial exchange field at a f…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
Ferromagnetic insulators can induce a strong exchange field in an adjacent superconductor via the magnetic proximity effect. This manifests as spin-splitting of the BCS density of states of the superconductor, an important ingredient for…
Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of…
An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin…
We use a Green's function method to study the temperature-dependent average moment and magnetic phase-transition temperature of the striped antiferromagnetism of LaFeAsO, and other similar compounds, as the parents of FeAs-based…
Antiferromagnetic insulators can become active spintronics components by controlling and detecting their dynamics via spin currents in adjacent metals. This cross-talk occurs via spin-transfer and spin-pumping, phenomena that have been…
We have studied the spin and exchange coupling of Ti atoms on a Cu$_2$N/Cu(100) surface using density functional theory. We find that individual Ti have a spin of 1.0 (i.e., 2 Bohr Magneton) on the Cu$_2$N/Cu(100) surface instead of…
Yttrium Iron Garnet is the ubiquitous magnetic insulator used for studying pure spin currents. The exchange constants reported in the literature vary considerably between different experiments and fitting procedures. Here we calculate them…
At a superconductor-ferromagnet (S/F) interface, the F layer can introduce a magnetic exchange field within the S layer, which acts to locally spin split the superconducting density of states. The effect of magnetic exchange fields on…
In this study, we explore the influence of interlayer exchange coupling on magnetization reversal triggered by femtosecond laser pulses in ferromagnetic spin valves. Our experiments, focused on femtosecond laser-induced magnetization…
The experimental studies of the paramagnetic-antiferromagnetic phase transition through M\"{o}ssbauer spectroscopy and measurements of temperature and field dependencies of magnetic susceptibility in the layered Cu$_{0.15}$Fe$_{0.85}$PS$_3$…
We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal metal (NM)/ferromagnet (FM) bilayer system. Starting with a simple FI--NM interface model with both…
Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very…
Using the non-equilibrium statistical operator method (NSO), we have investigated the spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure. We have analyzed the approximation of effective…
The development of room-temperature magnetic semiconductors is critical for advancing spintronic technologies, yet van der Waals magnets like CrI3 exhibit intrinsically low Curie temperatures (Tc = 45 K). This study employs first-principles…
The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
We report the latest results of searching for possible new macro-scale spin-spin-velocity-dependent forces (SSVDFs) based on specially designed iron-shielded SmCo$_5$ (ISSC) spin sources and a spin exchange relaxation free (SERF)…
We present a multi-frequency Electron Spin Resonance (ESR) study in the range of 4 GHz to 420 GHz of the quasi-one-dimensional, non-dimerized, quarter-filled Mott insulators, delta-(EDT-TTF-CONMe_2)_2X (X=AsF_6, Br). In the high temperature…