Related papers: Contact gating at GHz frequency in graphene
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…
This paper presents an electrolytically gated broadband microwave sensor where atomically-thin graphene layers are integrated into coplanar waveguides and coupled with microfluidic channels. The interaction between a solution under test and…
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a…
Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…
We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor…
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…
Graphene membrane irradiated by weak activating periodic electric field in terahertz range is considered. The corrected formula for the graphene quantum conductivity is found. The obtained formula gives complex conjugate results when…
This article aims at providing a self-contained introduction to theoretical modeling of gate-induced carrier density in graphene sheets. For this, relevant theories are introduced, namely, classical capacitance model (CCM), self-consistent…
The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier.…
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity…
We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough…
We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently…
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors…
Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and…
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…
The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to…
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are…
Self-heating is a severe problem for high-power microelectronic devices. Graphene and few-layer graphene have attracted tremendous attention for heat removal thanks to their extraordinarily high in-plane thermal conductivity. However, this…
The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs) -- the partially transparent p-n interfaces introduced by conventional split-gates tend to short the QPC. This…
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully…