Related papers: Field induced nucleation in nano-structures
Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…
Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
The increasing pervasiveness of intelligent mobile applications requires to exploit the full range of resources offered by the mobile-edge-cloud network for the execution of inference tasks. However, due to the heterogeneity of such…
The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices whose…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
We present a theoretical model of spin transitions in stacks of molecular layers. Our model captures the already established physics of these systems (thermal hysteretic transitions and crossovers) and suggests a way towards in situ control…
Recent studies highlight the scientific importance and broad application prospects of two-dimensional (2D) sliding ferroelectrics, which prevalently exhibit vertical polarization with suitable stackings. It is crucial to understand the…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
The efficiency of the human brain in performing classification tasks has attracted considerable research interest in brain-inspired neuromorphic computing. Hardware implementations of a neuromorphic system aims to mimic the computations in…
Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a…
This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…
We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…
We propose an infrared power switch based on an asymmetric high-Q microcavity incorporating a metallic nanolayer in close proximity to a layer made of a phase-change material (PCM). The microcavity is designed so that when the PCM layer is…
Characterizing the temperature-dependent thermal conductivity is challenging because the property varies strongly with temperature and reliable heat flow measurement, not just temperature sensing, is difficult under experimental conditions.…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
We consider multi-terminal transport through a flake of rectangular shape of a two-dimensional topological insulator in the presence of an in-plane magnetic field. This system has been shown to be a second-order topological insulator, thus…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
We present a theory of second phase conductive filaments in phase transformable systems; applications include threshold switches, phase change memory, and shunting in thin film structures. We show that the average filament parameters can be…
A challenging aspect of the description of a tokamak disruption is evaluating the hot tail runaway electron (RE) seed that emerges during the thermal quench. This problem is made challenging due to the requirement of describing a strongly…