Related papers: FORC+ Analysis of Perpendicular Magnetic Tunnel Ju…
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation…
The nature of the resistive transition for a current applied parallel to the magnetic field in high-Tc materials is investigated by numerical simulation on the three dimensional Josephson junction array model. It is shown by using finite…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
We report a novel singularity in the hysteresis of spin glasses, the reversal-field memory effect, which creates a non-analyticity in the magnetization curves at a particular point related to the history of the sample. The origin of the…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
Subjecting a magnetic tunnel junction (MTJ) to a spin current and/or electric voltage induces magnetic precession, which can reciprocally pump current through the circuit. This results in an ac impedance, which is sensitive to the magnetic…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach…
Magnetic resonance imaging (MRI) plays a vital role in clinical diagnostics, yet it remains hindered by long acquisition times and motion artifacts. Multi-contrast MRI reconstruction has emerged as a promising direction by leveraging…
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…
With the help of a simple model, we analyze Scanning Tunneling Microscopy images of simple and double moir\'e patterns resulting from misoriented bi- and tri-layers graphene stacks. It is found that the model reproduces surprisingly well…
Finding the true magnetic structure at given external conditions is crucial for describing magnetic materials and predicting their properties. This is especially important for high-throughput screening of potentially good magnets that…
We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of…
Multi-frequency subspace migration imaging technique are usually adopted for the non-iterative imaging of unknown electromagnetic targets such as cracks in the concrete walls or bridges, anti-personnel mines in the ground, etc. in the…
Magnetization reversal of interconnected Kagome artificial spin ice was studied by the first-order reversal curve (FORC) technique based on the magneto-optical Kerr effect and magnetoresistance measurements. The magnetization reversal…
Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses of MTJ STO technology in various applications, an analytical…