Related papers: Three-Dimensional Magnetic Page Memory
Depth-grading of magnetic anisotropy in perpendicular magnetic media has been predicted to reduce the field required to write data without sacrificing thermal stability. To study this prediction, we have produced Co/Pd multilayers with…
A model is studied for the theoretical description of nanoscale magnetic films with high perpendicular anisotropy. In the model the magnetic film is described in terms of single domain magnetic grains with Ising-like behavior, interacting…
We have constructed an imaging device that capable to show a spatio-temporal distribution of magnetic field intensity in real-time. The device employs a set of AMR (Anisotropic Magneto Resistance) 3-axis magnetometers, which are arranged…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
Planar spin-transfer devices with dominating easy-plane anisotropy can be described by an effective one-dimensional equation for the in-plane angle. Such a description provides an intuitive qualitative understanding of the magnetic…
The study of 3D magnetic nanostructures has uncovered a range of rich phenomena including the stabilization and control of topological spin textures using nanoscale curvature, dynamic effects allowing controlled spin-wave emission, and…
The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
Patterning nanomagnets in three-dimensions presents a new paradigm in condensed matter physics and allows access to a plethora of fundamental phenomena including robust spin textures, magnetic metamaterials that are home to defects carrying…
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
In thin magnetic films with strong perpendicular anisotropy and strong demagnetizing field two ordered phases are possible. At low temperatures, perpendicularly oriented magnetic domains form a striped pattern. As temperature is increased…
Noncollinear antiferromagnets with novel magnetic orders, vanishingly small net magnetization and exotic spin related properties hold enormous promise for developing next-generation, transformative spintronic applications. A major ongoing…
The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain…
The study of magnetic phenomena in low-dimensional systems has largely explored after the discovery of two-dimensional (2D) magnetic materials, such as CrI3 and Cr2Ge2Te6 in 2017. These materials presents intrinsic magnetic order,…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…
Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and efficient spin current generation and transmission.…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of…