Related papers: Franz-Keldysh effect in semiconductor built-in fie…
The inductance/impedance due to thin metallic structures in non-destructive testing (NDT) is difficult to evaluate. In particular, in Finite Element Method (FEM) eddy current simulation, an extremely fine mesh is required to accurately…
The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, particularly simple analytical expressions are known to exist for…
Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron doping, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of…
In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
Unlike ferromagnetism, antiferromagnetism cannot readily be included in the quasiclassical Keldysh theory because of the rapid spatial variation in the directions of the magnetic moments. The quasiclassical framework is useful because it…
Recent photoabsorption measurements have revealed a rich fine structure in the collective charge-density excitation spectrum of few-electron quantum dots in the presence of magnetic fields. We have performed systematic computational studies…
Nonlinear optics plays important roles in the research of fundamental physics and the applications of high-performance optoelectronic devices. The bulk nonlinear optical responses arise from the uniform light absorption in…
A quasiparticle band structure of a single layer 2H-NbSe$_2$ is reported by using first-principles $GW$ calculation. We show that a self-energy correction increases the width of a partially occupied band and alters its Fermi surface shape…
Recent studies have revealed that the quantum geometry of electronic bands determines the electromagnetic properties of non-interacting insulators and semimetals. However, the role of quantum geometry in the optical responses of interacting…
We investigate active electrolytes within the mean-field level of description. The focus is on how the double-layer structure of passive, thermalized charges is affected by active dynamics of all constituting ions. One feature of active…
The purpose of this review is to provide a comprehensive pedagogical introduction into Keldysh technique for interacting out-of-equilibrium fermionic and bosonic systems. The emphasis is placed on a functional integral representation of…
We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing(BGN) and Fermi edge singularity(FES) in Al$_x$Ga$_{1-x}$As using photoluminescence(PL) spectroscopy. The band-to-band transition…
We study the effects of an external magnetic field on the properties of the quasiparticle spectrum of the class of 2+1 dimensional strongly coupled theories holographically dual to charged AdS$_4$ black holes at zero temperature. We uncover…
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates…
In 2D field effect transistors the gate electrostatically dopes the 2D semiconductor (2DSC) channel, tuning the Fermi level. In principle, Kelvin probe force microscopy (KPFM) can detect the Fermi level, and its dependence on gate bias as…
Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation…
The deep ultraviolet, the bandgap region of dielectrics, is not readily accessible for established methods of ultrafast spectroscopy. Here, a miniature beamline, where a tailored deep ultraviolet field is used immediately after the…
We have analytically investigated the effects of non-linearity on the free energy and thermodynamic geometry of holographic superconductors in $2+1 -$dimensions. The non-linear effect is introduced by considering the coupling of the massive…