Related papers: Franz-Keldysh effect in semiconductor built-in fie…
We introduce and analyze the properties of dynamical Franz-Keldysh effect, i.e. the change of density-of-states, or absorption spectra, of semiconductors under the influence of {\it time-dependent} electric fields. In the case of a harmonic…
In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate.…
The effect of a constant electric field on two-photon absorption in a semiconductor is calculated using an independent-particle theory. The theoretical framework is an extension of a theory of the one-photon Franz-Keldysh effect [Wahlstrand…
We theoretically study the effect of THz radiation on the linear optical absorption spectra of semiconductor structures. A general theoretical framework, based on non-equilibrium Green functions, is formulated, and applied to the…
We study the linear optical absorption of bulk semiconductors in the presence of a homogeneous constant (dc) electric field with an approach suitable for including excitonic effects while working with many-band models. The absorption…
The effect of a constant electric field on two-photon absorption in a direct band gap semiconductor is calculated using an independent-particle theory. Two band structure models for GaAs are used: a two-band parabolic model and an…
A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an…
We record photoreflectance from Ge/GeSi modulation doped quantum wells possessing $10^4$ V/cm perpendicular electric fields. Qualitatively very different spectra are obtained from samples of well-width 100 \AA and 250 \AA. Comparing the…
We applied the time-resolved attosecond transient absorption spectroscopy to systematically investigate ultrafast optical responses of condensed matter systems. Under an intense pump pulse, absorption spectra indicate that the…
The Keldysh theory of photoionization for solids is generalized to atomically thin two-dimensional semiconductors. We derive a closed-form formula and its asymptotic forms for a two-band model with a Kane dispersion. These formulas exhibit…
The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit…
Irradiation of the strong light on the material leads to numerous non-linear effects that are essential to understand the physics of excited states of the system and for optoelectronics. Here, we study the non-linear thermoelectric effect…
Franz-Keldysh oscillations of the optical absorption in the presence of short-range disorder are studied theoretically. The magnitude of the effect depends on the relation between the mean-free path in a zero field and the distance between…
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin…
The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap absorption in the presence of intense THz electric fields. It bridges the gap between the DC Franz- Keldysh effect and multi-photon absorption and competes with the THz…
We present a systematic microscopic derivation of the semiclassical Boltzmann equation for band structures with the finite Berry curvature based on Keldysh technique of nonequilibrium systems. In the analysis, an ac electrical driving field…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
We present the analytical method enables one to compute the optical functions i.e., reflectivity, transmission and absorption including the excitonic effects for a semiconductor crystal exposed to a uniform electric field for energy region…
For semiconductors used in photovoltaic devices, the effective mass approximation allows calculation of important material properties from first-principles calculations, including optical properties (e.g. exciton binding energies), defect…
Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…