Related papers: Electrical half-wave rectification at ferroelectri…
Domain walls in correlated charge density wave compounds such as 1T-TaS2 can have distinct localized states which govern physical properties and functionalities of emerging quantum phases. However, detailed atomic and electronic structures…
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power…
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…
We propose a method that allows power conversion from DC magnetic fields to AC electric voltages using domain wall (DW) motion in ferromagnetic nanowires. The device concept relies on spinmotive force, voltage generation due to…
Dynamics of magnetization domain walls (DWs) in thin ferromagnetic nanotubes subject to longitudinal external fields is addressed analytically in the regimes of strong and weak penalization. Explicit functional forms of the DW profiles and…
We study the influence of oxygen vacancies on the formation of charged 180$^\circ$ domain walls in ferroelectric BaTiO$_3$ using first principles calculations. We show that it is favorable for vacancies to assemble in crystallographic…
Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current…
Ferroelectric domain structures, separated by domain walls, often display unconventional physics and hold significant potential for applications in nano-devices. Most naturally growth domain walls are charge-neutral to avoid increased…
We study current-induced domain-wall dynamics in a thin ferromagnetic nanowire. The domain-wall dynamics is described by simple equations with four parameters. We propose the procedure to determine these parameters by all-electric…
The scattering of the eletron by a domain wall in a nano-wire is studied perturbatively to the lowest order. The correction to the thermodaynamic potential of the electron system due to the scattering is calculated from the phase shift. The…
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a…
We study dipolar bosons in a 1D optical lattice and identify a region in parameter space---strong coupling but relatively weak on-site repulsion---hosting a series of stable charge-density-wave (CDW) states whose low-energy excitations,…
Nanoscale self-localized topological spin textures, such as domain walls and skyrmions, are of interest for the fundamental physics of magnets and spintronics applications. Ferrimagnets (FiMs), in the region close to the angular momentum…
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…
Domain walls (DWs) are singularities in an ordered medium that often host exotic phenomena such as charge ordering, insulator-metal transition, or superconductivity. The ability to locally write and erase DWs is highly desirable, as it…
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density,…
We resolve the microscopic mechanism of polarization switching in wurtzite ferroelectric AlScN by integrating advanced thin-film fabrication, ferroelectric switching dynamics characterizations, high-resolution scanning transmission electron…
The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching…
The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility.…
In this work we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to…