Related papers: Nanoscale periodic domain patterns in tetragonal f…
Analytical description of domain structure morphology and phase diagrams of ferroelectric nanoparticles is developed in the framework of Landau Ginzburg Devonshire approach. To model realistic conditions of incomplete screening of…
The equilibrium sizes of micro- and nano-domains caused by electric field of atomic force microscope tip in ferroelectric semiconductor crystals have been calculated. The domain was considered as a prolate semi-ellipsoid with rather thin…
High-strain piezoelectric materials are often ceramics with a complicated constitution. In particular, PZT is used with compositions near to a so-called morphotropic phase boundary, where not only different variants of the same phase…
The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…
The manipulation of mesoscale domain wall phenomena has emerged as a powerful strategy for designing ferroelectric responses in functional devices, but its full potential has not yet been realized in the field of magnetism. We show that…
Bounded charges induced by the polarization gradient in finite-size ferroelectrics are known to produce the unfavorable depolarization electric field that suppresses the uniform ferroelectric state. To reduce the depolarization energy the…
Stripe states in multilayer systems with perpendicular polarization are investigated by analytical calculations within a general continuum approach, applicable to ferromagnetic, ferroelectric, or ferroelastic nanoscale superlattices. The…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We analyzed the domain morphology, electrocaloric response, and negative capacitance states in a one-dimensional array of uniformly oriented, radial symmetric ferroelectric nanowires, whose spontaneous polarization is normal to their…
In the framework of the Landau-Ginzburg-Devonshire (LGD) approach we studied finite size effects of the phase diagram and domain structure evolution in spherical nanoparticles of uniaxial ferroelectric. The particle surface is covered by a…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
Flexoelectric effect is the coupling between strain, polarization and their gradients, which are prominent at the nanoscale. Although this effect is important to understand nanostructures, such as domain walls in ferroelectrics, its…
Understanding the dynamic behavior of the domain structure is critical to the design and application of super-elastic freestanding ferroelectric thin films. The phase-field simulation is currently a powerful tool for observing, exploring,…
Structural features of ferroic domains are fundamentally important for the understanding of microstructure and physical properties of ferroic materials, and they are also of technological significance for information storage and electronic…
The domain patterns in a thin ferromagnetic film are investigated in both experiments and numerical simulations. Magnetic domain patterns under a zero field are usually observed after an external magnetic field is removed. It is…
Relaxor ferroelectrics are a class of materials that are widely perceived as deriving their exotic properties from structural heterogeneities. Understanding the microscopic origin of the superior electromechanical response requires…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
We consider periodic domain structures which appear due to the magnetoelastic interaction if the antiferromagnetic crystal is attached to an elastic substrate. The peculiar behavior of such structures in an external magnetic field is…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…