Related papers: Electrometry by optical charge conversion of deep …
Nitrogen-vacancy (NV) center in diamond is a promising quantum sensor with remarkably versatile sensing capabilities. While scanning NV magnetometry is well-established, NV electrometry has been so far limited to bulk diamonds. Here we…
We present the design of a continuous-wave, highly sensitive optical spectrometer for millimeter-wave frequencies between 50 and 1000 GHz. The spectrometer uses photomixing of near-infrared light to generate radiation in a wide frequency…
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin…
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage,…
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high…
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers…
Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV$^0$) and the negative nitrogen-vacancy (NV$^-$), are among leading building blocks of solid-state quantum technologies. Integrating these defects…
We present a pair of seismometers capable of measurement in all six axes of rigid motion. The vacuum-compatible devices implement compact interferometric displacement sensors to surpass the sensitivity of typical electrical readout schemes.…
Stability and photometric accuracy of silicon imaging detectors are essential for the Habitable Worlds Observatory and a range of NASA missions that will explore time domain astrophysics and astronomy over a spectral range spanning soft…
Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors,…
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences,…
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become…
Thick, Charge Coupled Devices (CCDs) have recently been explored for applied physics, such as nuclear explosion monitoring, and dark matter detection purposes. When run in fully-depleted mode, these devices are sensitive detectors for…
We show that the charge accumulated by a dielectric plasma-facing solid can be measured by infrared spectroscopy. The approach utilizes a stack of materials supporting a surface plasmon resonance in the infrared. For frequencies near the…
Journal ref.: J. Phys.: Condens. Matter 25, 065602 (2013): We investigated the optical reflectivity of the heavy-fermion metal CeCu2Si2 in the energy range 3 meV - 30 eV for temperatures between 4K - 300K. The results for the charge…
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…
To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high…