Related papers: 1D Mott variable-range hopping with external field
Charge transport in disordered organic semiconductors occurs by hopping of charge carriers between localized sites that are randomly distributed in a strongly energy dependent density of states. Extracting disorder and hopping parameters…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of transport in thick film resistors remains unclear. However, recent low temperature measurements point toward a possible variable range hopping…
We use a mean-field (Hartree-like) approach to study the conductance of a strongly localized electron system in two dimensions. We find a crossover between a regime where Coulomb interactions modify the conductance significantly to a regime…
Variable-range hopping conductivity has long been understood in terms of a canonical prescription for relating the single-particle density of states to the temperature-dependent conductivity. Here we demonstrate that this prescription…
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…
We have investigated the charge carrier transport in organic molecular semiconductors. It has been found that mobility is a function of electric field and temperature due to hopping conduction. Several theoretical models for charge…
Periodically driven systems can lead to a directed motion of particles. We investigate this ratchet effect for a bosonic Mott insulator where both a staggered hopping and a staggered local potential vary periodically in time. If driving…
Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
We investigate the Mott transitions in the two-orbital Hubbard model with different bandwidths. By combining dynamical mean field theory with the exact diagonalization, we discuss the stability of itinerant quasi-particle states in each…
Single-particle spectral properties near the Mott transition in the one-dimensional Hubbard model are investigated by using the dynamical density-matrix renormalization group method and the Bethe ansatz. The pseudogap, hole-pocket behavior,…
The variable range hopping results for noninteracting electrons of Mott and Shklovskii are generalized to 1D disordered charge density waves and Luttinger liquids using an instanton approach. Following a recent paper by Nattermann,…
Electron transport properties in compacted VO2 nanopowders were studied. While VO2 usually exhibits a first-order metal-insulator transition (MIT) at ~340K, in our compressed nanopowder samples the MIT was significantly broadened due to…
Hopping conductivity is enhanced when exposed to microwave fields (Phys. Rev. Lett., 102, 206601, 2009). Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features…
Strongly correlated metals close to the Mott transition display unusual transport regimes, together with large spectral weight transfers in optics and photoemission. We briefly review the theoretical understanding of these effects, based on…
We present a way of partly reincorporate the effects of the localized bonding electrons on the dynamics of their itinerant counterparts in Hubbard-like Hamiltonians. This is done by relaxing the constraint that the former should be entirely…
We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random…
The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…
One-dimensional hopping model is useful to describe the motion of microscopic particle in thermal noise environment, such as motor proteins. Recent experiments about the new generation of light-driven rotary molecular motors found that, the…