Related papers: Valley-Dependent Magnetoresistance in Two-Dimensio…
Broken spatial inversion symmetry in semiconducting materials with time-reversal pair valleys can exhibit valley polarization. Based on first-principles calculations, here we propose a lateral heterostructure of kagome lattice of hBN and…
Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in…
Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these…
Weyl semimetals are three-dimensional topological states of matter, in a sense that they host paired monopoles and antimonopoles of Berry curvature in momentum space, leading to the chiral anomaly. The chiral anomaly has long been believed…
Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
Electron bands in the untwisted bilayer graphene flatten out in a transverse electric field, offering a promising platform for correlated electron physics. We predict that the spin/valley isospin magnetism, resembling that seen in moir\'{e}…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
We study theoretically the electron dynamics of transition metal dichalcogenide quantum dots in the field of an ultrashort and ultrafast circularly polarized optical pulse. The quantum dots have the shape of a disk and their electron…
Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling…
We theoretically study transport signatures associated with a spontaneous 2-valley to 1-valley quantum phase transition in a two-dimensional electron gas (2DEG) tuned by decreasing the 2D carrier density, as claimed in a recent experiment…
In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
Dependence of x-ray magnetic circular dichroism on the experimental geometry is described by a frequency-dependent Hall vector. Using group theory, we derive a general relationship between the Hall vector and the orientation of the N\'eel…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
A system similar to gapped graphene (for example, fluorinated) containing two or more electron valleys is considered. It is assumed that the material has a sector cut and is deformed in the plane and the the cut edges are connected to form…