Related papers: Electrodynamics of ferroelectric films with negati…
Here we demonstrate that MnTe epitaxial films with zinc-blend structure and MnTe/ZnTe multilayers should show ferroelectric polarization in antiferromagnetically (AFM) ordered state and thus belong to multiferroics. Spontaneous…
The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation…
Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…
We studied the depth dependent magnetization profile of the magnetostrictive Co thin film layer in a PMN-PT (011)/Ta/Co/Ta structure under both zero and nonzero applied electric field using polarized neutron reflectometry. Application of…
HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…
Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
We discuss the optical response peculiarities for ultrathin plasmonic films of finite lateral size. Due to their plasma frequency spatial dispersion caused by the spatial confinement of the electron motion, the film dielectric permittivity…
We present a formalism for understanding the elecromagnetism of metasurfaces, optically thin composite films with engineered diffraction. The technique, diffractive interface theory (DIT), takes explicit advantage of the small optical…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
The electrodynamic properties of BiFeO$_3$ films in the THz region are investigated via time domain spectroscopy. Combining the use of transmission ($\tilde{T}$) and reflection ($\tilde{R}$) measurements under normal incidence, the…
The transient negative capacitance (NC) of solid ferroelectric materials used in field effect transistors can reduce the power dissipation of electronics. Here we show that similar negative capacitance appears in the recently discovered…
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors…
Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
In ferromagnetic thin films, the presence of an out-of-plane component of the magnetic anisotropy may induce a transition from planar to stripe-like magnetic domains above a critical thickness, $t_c$. Because of the changes in the domain…
Time-Domain Thermoreflectance (TDTR) characterization of FeRh throughout its first-order antiferromagnetic (AF) to ferromagnetic (FM) transition shows that the transient reflectance, $\Delta$R(t)/R, strongly depends on the magnetic order of…
We consider ferroelectric phase transitions in both short-circuited and biased ferroelectric-semiconductor films with a space (depletion) charge which leads to some unusual behavior. It is shown that in the presence of the charge the…
We present a microscopic quantum theory for nonlinear optical phenomena in semiconductor quantum well heterostructures operating in the regime of ultra-strong light matter coupling regime. This work extends the Power-Zienau-Wooley (PZW)…
We give detailed analysis of the effect of depolarizing field in nanometer-size ferroelectric capacitors studied by Kim et al. [Phys. Rev. Lett. 95, 237602 (2005)]. We calculate a critical thickness of the homogeneous state and its…