Related papers: Ultra-Fast Ferrimagnetic All Spin Logic Device
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Magnetic skyrmions are topological quasiparticles of great interest for data storage applications because of their small size, high stability, and ease of manipulation via electric current. Antiferromagnetic (AF) skyrmions, with new…
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of…
All-optical spin switching (AOS) is a new phenomenon found in a small group of magnetic media, where a single laser pulse can switch spins from one direction to another, without assistance of a magnetic field, on a time scale much shorter…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
A theory of magnetization dynamics in ferrimagnetic materials with antiparallel aligned spin sub-lattices under action of spin-transfer torques (STT) is developed. We consider magnetization dynamics in GdFeCo layers in two cases of magnetic…
Antiferromagnetic superlattices (AFSL) are proposed based on the buckled hexagonal two-dimensional materials, which can be realized by the proximity effect of the periodically deposited antiferromagnets. It is found that the AF proximity…
By comparing femtosecond laser pulse induced ferro- and antiferromagnetic dynamics in one and the same material - metallic dysprosium - we show both to behave fundamentally different. Antiferromagnetic order is considerably faster and much…
Light-spin coupling is an attractive phenomenon from the standpoints of fundamental physics and device applications, and has spurred rapid development recently. Whereas the current efforts are devoted to trivial magnetism, the interplay…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
Interplay between magnetic ordering and topological electrons not only enables new topological phases but also underpins electrical control of magnetism. Here we extend the Kane-Mele model to include the exchange coupling to a collinear…
In this paper we systematically evaluate the variation in the reversal delay of a nanomagnet driven by a longitudinal spin current while under the influence of thermal noise. We then use the results to evaluate the performance of an…
Energy-efficient spintronic devices require a large spin-orbit torque (SOT) and low damping to excite magnetic precession. In conventional devices with heavy-metal/ferromagnet bilayers, reducing the ferromagnet thickness to $\sim$1 nm…
Damping effects form the core of many emerging concepts for high-speed spintronic applications. Important characteristics such as device switching times and magnetic domain-wall velocities depend critically on the damping rate. While the…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
Flexible electronics and neuromorphic computing face key challenges in material integration and function retention. In particular, freestanding membranes suffer from slow sacrificial layer removal and interfacial strain, while neuromorphic…
We propose that underdoped high $T_c$ superconductors are described by an algebraic spin liquid (ASL) at high energies, which undergoes a spin-charge recombination transition at low energies. The spin correlation in the ASL is calculated…