Related papers: Electric-field modification of interfacial spin-or…
Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT…
Band inversion, one of the key signatures of time-reversal invariant topological insulators (TIs), arises mostly due to the spin-orbit (SO) coupling. Here, based on ab initio density-functional calculations, we report a theoretical…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
The advancement of spin-based devices as a replacement for CMOS technology demands lower spin-switching energy in ferromagnetic (FM) materials. Ferroelectric (FE) materials offer a promising avenue for influencing FM properties, yet the…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer,…
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
With its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin-orbit…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
The successful theoretical prediction and experimental demonstration of hybrid improper ferroelectricity (HIF) provides a new pathway to couple octahedral rotations, ferroelectricity, and magnetism in complex materials. To enable…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
We study the spin-orbit interaction effects in a one-dimensional electron system that result from the image charges in a nearby metallic gate. The nontrivial property of the image-potential-induced spin-orbit interaction (iSOI) is that it…