Related papers: Quantum Interference Controls the Electron Spin Dy…
The effect of weak localization on spin relaxation in a two-dimensional system with a spin-split spectrum is considered. It is shown that the spin relaxation slows down due to the interference of electron waves moving along closed paths in…
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details…
A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…
Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disordered electron system. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
We discuss the influence of the electromagnetic environment and the electron-electron interaction on the weak localization correction to the conductivity of a disordered metal. The theory of this phenomenon for sufficiently high…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
We develop a semiclassical theory for spin-dependent quantum transport to describe weak (anti)localization in quantum dots with spin-orbit coupling. This allows us to distinguish different types of spin relaxation in systems with chaotic,…
We propose the weak magnetic effect, which emerges in quark-gluon plasma close to local thermal equilibrium as the dissipative correction to the quark phase space distribution function, as a novel contribution to the observed Lambda hyperon…
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins are modified or even halted by carriers' localization. The…
The evolution of the electron spin dynamics as consequence of carrier delocalization in $n$-type GaAs is investigated by the recently developed extended pump-probe Kerr/Faraday rotation spectroscopy. We find that isolated electrons…
At low temperatures, quantum corrections, originating from the interference of the many paths an electron may take between two points, tend to dominate the transport properties of two-dimensional conductors. These quantum corrections…
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a…