Related papers: 8T SRAM Cell as a Multi-bit Dot Product Engine for…
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the…
`In-memory computing' is being widely explored as a novel computing paradigm to mitigate the well known memory bottleneck. This emerging paradigm aims at embedding some aspects of computations inside the memory array, thereby avoiding…
This paper presents an in-memory computing (IMC) architecture developed on an 8x8 array of 8T SRAM cells. This architecture enables both multi-bit parallel Multiply-Accumulate (MAC) operations and standard memory processing through…
Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…
In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…
The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…
Traditional von Neumann architecture based processors become inefficient in terms of energy and throughput as they involve separate processing and memory units, also known as~\textit{memory wall}. The memory wall problem is further…
Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…
The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…
Artificial intelligence is widely used in everyday life. However, an insufficient computing efficiency due to the so-called von Neumann bottleneck cannot satisfy the demand for real-time processing of rapidly growing data. Memristive…
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been…
Security and energy-efficiency are critical for computing applications in general and for edge applications in particular. Digital in-Memory Computing (IMC) in SRAM cells have widely been studied to accelerate inference tasks to maximize…
This paper presents 6T SRAM cell-based bit-parallel in-memory computing (IMC) architecture to support various computations with reconfigurable bit-precision. In the proposed technique, bit-line computation is performed with a short WL…
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved…
With a growing need to enable intelligence in embedded devices in the Internet of Things (IoT) era, secure hardware implementation of Deep Neural Networks (DNNs) has become imperative. We will focus on how to address adversarial robustness…
Memristive Processing In-Memory (PIM) is one of the promising techniques for overcoming the Von-Neumann bottleneck. Reduction of data transfer between processor and memory and data processing by memristors in data-intensive applications…
Memristive technologies are attractive candidates to replace conventional memory technologies, and can also be used to perform logic and arithmetic operations using a technique called 'stateful logic.' Combining data storage and computation…
Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling…
In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…
As CMOS scaling reaches its technological limits, a radical departure from traditional von Neumann systems, which involve separate processing and memory units, is needed in order to significantly extend the performance of today's computers.…