Related papers: Voltage-Controlled Topological-Spin Switch for Ult…

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…

Topological magnons, quantized spin waves featuring nontrivial boundary modes, present a promising route toward lossless information processing. Realizing practical devices typically requires magnons excited in a controlled manner to enable…

Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous…

Resolving the conductance of the topological surface states (TSSs) from the bulk contribution has been a great challenge for studying the transport property of topological insulators. By developing a non-purturbative diffusion equation that…

By their very nature, Spin Waves (SWs) consume ultra-low amounts of energy, which makes them suitable for ultra-low energy consumption applications. In addition, a compressor can be utilized to further reduce the energy consumption and…

Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…

3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons…

With the increasing power density of electronics components, the heat dissipation capacity of heat sinks gradually becomes a bottleneck. Many structural optimization methods, including topology optimization, have been widely used for heat…

Efficient control of phonons is crucial to energy-information technology, but limited by the lacking of tunable degrees of freedom like charge or spin. Here we suggest to utilize crystalline symmetry-protected pseudospins as new quantum…

The stable precession region in the spintronic oscillator with an in-plane magnetic tunnel junction is very narrow under small external fields, restricting its applications such as for microwave generators. Here we show that this region can…

In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…

The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…

Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient…

We propose an ac current source that can be tuned from a pure charge to a pure spin current source. The device consists of two mesoscopic capacitors attached to a two-dimensional strip of a topological insulator. The change from charge to…

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…

Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab…

Spin-valve structures are usually associated with the ability to modify the resistance of electrical currents. We here demonstrate a profoundly different effect of a spin-valve. In combination with a topological insulator and…

We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…