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We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…

Mesoscale and Nanoscale Physics · Physics 2018-09-06 C. Couteau , A. Larrue , C. Wilhelm , C. Soci

Heavily-doped semiconductor nanocrystals characterized by a tunable plasmonic band have been gaining increasing attention recently. Herein, we introduce this type of materials focusing on their structural and photo physical properties.…

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

Materials Science · Physics 2017-10-11 F. Liu , S. Prucnal , Y. Berencén , Z. Zhang , Y. Yuan , Y. Liu , R. Heller , R. Boettger , L. Rebohle , W. Skorupa , M. Helm , S. Zhou

By using solid state reaction method we have fabricated the hole doped $La_{1-x}Sr_xFeAsO$ superconductors with Sr content up to 0.13. It is found that the sharp anomaly at about 150 K and the low temperature upturn of resistivity are…

Superconductivity · Physics 2015-05-13 Gang Mu , Lei Fang , Huan Yang , Xiyu Zhu , Peng Cheng , Hai-Hu Wen

Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading…

The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…

Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…

Mesoscale and Nanoscale Physics · Physics 2025-02-12 Son T. Le , Thuc T. Mai , Maria F. Munoz , Angela R. Hight Walker , Curt A. Richter , Aubrey T. Hanbicki , Adam L. Friedman

Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even…

Mesoscale and Nanoscale Physics · Physics 2018-02-14 A. R. Ullah , D. J. Carrad , P. Krogstrup , J. Nygård , A. P. Micolich

Effects of electron doping on the BiS$_2$-based superconductors Sr$_{1-x}$La$_x$FBiS$_2$ ($0\le x\le 0.6$) have been investigated using the systematically synthesized polycrystals. The pristine compound is a band insulator with the BiS$_2$…

Superconductivity · Physics 2015-06-18 H. Sakai , D. Kotajima , K. Saito , H. Wadati , Y. Wakisaka , M. Mizumaki , K. Nitta , Y. Tokura , S. Ishiwata

Rare-earth doped nanocrystals are emerging light sources used for many applications in nanotechnology enabled by human ability to control their various optical properties with chemistry and material science. However, one important optical…

Hy brid composites obtained upon blending conjugated polymers and colloidal inorganic semiconductor nanocrystals are regarded as attractive photo-active materials for optoelectronic applications. Here we demonstrate that tailoring…

Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc…

Superconductivity · Physics 2009-11-07 Ziqiang Wang , Jan R. Engelbrecht , Shancai Wang , Hong Ding , Shuheng H. Pan

Silicon has long been the foundational semiconductor material for a broad range of electronic devices, owing to its numerous advantages: wide natural availability, ease of synthesis in both crystalline and amorphous forms, and relatively…

Materials Science · Physics 2025-06-24 Arturo Ramírez-Porras

We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in…

Based on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen saturated silicon nanowire segments having different lengths and diameters form multiple quantum well structures. The band…

Mesoscale and Nanoscale Physics · Physics 2010-12-22 Seymur Cahangirov , Salim Ciraci

We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the…

Superconductivity · Physics 2014-12-23 D. F. Shao , W. J. Lu , H. Y. Lv , Y. P. Sun

Self-doping can not only suppress the photogenerated charge recombination of semiconducting quantum dots by self-introducing trapping states within the bandgap, but also provide high-density catalytic active sites as the consequence of…

Boosting superconductivity by metallic reservoirs is the essence of Kivelson's bilayer proposal. One layer provides pairing to the electrons, while the weakly coupled metal provides additional phase coherence to those pairs by mediating…

In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…

Materials Science · Physics 2019-03-27 Fernando P. Sabino , Su-Huai Wei , Anderson Janotti

We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\,…